The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Mar. 19, 2004
Junko Iwanaga, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiko Kanzawa, Kyoto, JP;
Haruyuki Sorada, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Junko Iwanaga, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiko Kanzawa, Kyoto, JP;
Haruyuki Sorada, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.