The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7985961 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 26, 2011

Filed:

Dec. 20, 2007
Applicants:

Sang-jun Choi, Yongin-si, KR;

Jung-hyun Lee, Yongin-si, KR;

Chang-soo Lee, Suwon-si, KR;

Inventors:

Sang-jun Choi, Yongin-si, KR;

Jung-hyun Lee, Yongin-si, KR;

Chang-soo Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.


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Choi, Sang-jun. (2011). Resistive random access memory device (U.S. Patent No. 7985961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7985961

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