The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Jul. 11, 2008
Michele Magistretti, Gessate, IT;
Fabio Pellizzer, Follina, IT;
Augusto Benvenuti, Lallio, IT;
Marcello Mariani, Milan, IT;
Michele Magistretti, Gessate, IT;
Fabio Pellizzer, Follina, IT;
Augusto Benvenuti, Lallio, IT;
Marcello Mariani, Milan, IT;
Intel Corporation, Santa Clara, CA (US);
Abstract
A phase change memory may include self-aligned polysilicon vertical bipolar junction transistors used as select devices. The bipolar junction transistors may be formed with double shallow trench isolation. For example, the emitters of each bipolar transistor may be defined by a first set of parallel trenches in one direction and a second set of parallel trenches in the opposite direction. In some embodiments, the formation of parasitic PNP transistors between adjacent emitters may be avoided.