The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Aug. 13, 2008
Tibor Bolom, Fishkill, NY (US);
Stephan Grunow, Wappingers Falls, NY (US);
David L. Rath, Stormville, NY (US);
Andrew Herbert Simon, Fishkill, NY (US);
Tibor Bolom, Fishkill, NY (US);
Stephan Grunow, Wappingers Falls, NY (US);
David L. Rath, Stormville, NY (US);
Andrew Herbert Simon, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Advanced Micro Devices, Inc. (“AMD”), Sunnyvale, CA (US);
Abstract
A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture. A contiguous via and interconnect may be formed anchored into the extended and winged aperture while using a plating method, absent voids.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile