The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Jun. 04, 2009
Kong-beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Hsin-Chu, TW;
Su-chen Lai, Hsinchu, TW;
Gary Shen, Yonghe, TW;
Kong-Beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Hsin-Chu, TW;
Su-Chen Lai, Hsinchu, TW;
Gary Shen, Yonghe, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device is disclosed. The method includes providing a substrate; forming one or more gate structures over the substrate; forming a buffer layer over the substrate, including over the one or more gate structures; forming an etch stop layer over the buffer layer; forming a interlevel dielectric (ILD) layer over the etch stop layer; and removing a portion of the buffer layer, a portion of the etch stop layer, and a portion of the ILD layer over the one or more gate structures.