The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Nov. 25, 2008
Bradley P. Smith, Austin, TX (US);
Bradley P. Smith, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In one embodiment, a method of forming a via includes providing a semiconductor substrate, wherein the semiconductor substrate comprises a through-via region, forming isolation openings and a sacrificial feature in the through-via region, filling the isolation openings to form isolation regions, forming a dielectric layer over the semiconductor substrate after filling the isolation openings, forming a first portion of a through-via opening in the dielectric layer, forming a second portion of the through-via opening in the semiconductor substrate, wherein forming the second portion of the through-via opening comprises removing the sacrificial feature, and forming a conductive material in the first portion and the second portion of the through-via opening.