The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Dec. 14, 2007
Kyoung-mi Kim, Anyang-si, KR;
Young-ho Kim, Yongin-si, KR;
Myung-sun Kim, Daegu, KR;
Jae-ho Kim, Yongin-si, KR;
Chang-ho Lee, Suwon-si, KR;
Seok Han, Hwaseon-si, KR;
Kyoung-Mi Kim, Anyang-si, KR;
Young-Ho Kim, Yongin-si, KR;
Myung-Sun Kim, Daegu, KR;
Jae-Ho Kim, Yongin-si, KR;
Chang-Ho Lee, Suwon-si, KR;
Seok Han, Hwaseon-si, KR;
Abstract
In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern including a siloxane polymer. The conductive layer on the oxide layer pattern is selectively removed using the buffer layer pattern as an etching mask. A conductive pattern having a cylindrical shape can be formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.