The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 30, 2008
Applicants:
Yinan Chen, Taipei, TW;
Hsien-wen Liu, Taoyuan County, TW;
Tzu-ching Tsai, Taoyuan County, TW;
Inventors:
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.