The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jul. 19, 2007
Hironobu Miya, Toyama, JP;
Kazuhiro Hirahara, Joetsu, JP;
Yoshitaka Hamada, Joetsu, JP;
Atsuhiko Suda, Toyama, JP;
Hironobu Miya, Toyama, JP;
Kazuhiro Hirahara, Joetsu, JP;
Yoshitaka Hamada, Joetsu, JP;
Atsuhiko Suda, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.