The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 25, 2008
Cheol-hwi Ryu, Ichon, KR;
Hyung-soon Park, Ichon, KR;
Jong-han Shin, Ichon, KR;
Jum-yong Park, Ichon, KR;
Sung-jun Kim, Ichon, KR;
Cheol-Hwi Ryu, Ichon, KR;
Hyung-Soon Park, Ichon, KR;
Jong-Han Shin, Ichon, KR;
Jum-Yong Park, Ichon, KR;
Sung-Jun Kim, Ichon, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A method of manufacturing a phase-change random access memory device includes forming an interlayer insulating film on a semiconductor substrate, on which a bottom structure is formed, and patterning the interlayer insulating film to form a contact hole, forming a spacer on the side wall of the contact hole; forming a dielectric layer in the contact hole, and removing the spacer to form a bottom electrode contact hole. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.