The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Feb. 29, 2008
Mao-quan Chen, Changhua County, TW;
Ching-nan Hsiao, Kaohsiung County, TW;
Chung-lin Huang, Tao-Yuan, TW;
Mao-Quan Chen, Changhua County, TW;
Ching-Nan Hsiao, Kaohsiung County, TW;
Chung-Lin Huang, Tao-Yuan, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
The memory cell of the present invention has two independent storage regions embedded into two opposite sidewalls of the control gate respectively. In this way, the data storage can be more reliable. Other features of the present invention are that the thickness of the dielectric layers is different, and the two independent storage regions are formed on opposite bottom sides of the opening by the etching process and form a shape like a spacer. The advantage of the aforementioned method is that the fabricating process is simplified and the difficulty of self-alignment is reduced.