The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Oct. 22, 2009
Stephen M. Sirard, San Jose, CA (US);
James Deyoung, Dallas, TX (US);
Odette Turmel, Fremont, CA (US);
Stephen M. Sirard, San Jose, CA (US);
James DeYoung, Dallas, TX (US);
Odette Turmel, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)(OR'), where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)(OR′)R″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.