The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2011

Filed:

Mar. 27, 2008
Applicants:

Der-min Yuan, Taipei County, TW;

Shih-hsing Wang, Hsinchu, TW;

Inventors:

Der-Min Yuan, Taipei County, TW;

Shih-Hsing Wang, Hsinchu, TW;

Assignee:

Etron Technology, Inc., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Circuits and methods to minimize power required for sensing and precharge of DRAMs have been achieved. A control circuit ensures that during READ operations the duration of sensing of DRAM cell and precharging is kept to a minimum. A test DRAM cell is used to determine the exact time required for data sensing. Furthermore no precharging is performed during WRITE-operations. In case data is changing from '1' to '0' or vice versa data lines are inverted accordingly during WRITE operation.


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Yuan, Der-Min. (2011). Data flow scheme for low power dram (U.S. Patent No. 7978525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7978525

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