The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2011

Filed:

May. 20, 2009
Applicant:

Fang-mei Chao, Taichung County, TW;

Inventor:

Fang-Mei Chao, Taichung County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ESD protection device is described, which includes a first P-type doped region, a second P-type doped region, a first N-type doped region, a second N-type doped region and an isolation structure. The first P-type doped region is configured in a substrate. The second P-type doped region is configured in the first P-type doped region. The first N-type doped region is configured in the first P-type doped region and surrounds the second P-type doped region. The second N-type doped region is configured in the substrate and surrounds the first P-type doped region. The isolation structure is disposed between the first P-type doped region and the second N-type doped region, wherein a spacing is deployed between an outward edge of the first N-type doped region and the isolation structure.


Find Patent Forward Citations

Chao, Fang-Mei. (2011). Esd protection device (U.S. Patent No. 7977769). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7977769

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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