The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
May. 20, 2008
Xuguang Wang, Maple Grove, MN (US);
Shuiyuan Huang, Apple Valley, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Xuguang Wang, Maple Grove, MN (US);
Shuiyuan Huang, Apple Valley, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer is between the first insulating layer and second insulating layer. The solid electrolyte layer has a capacitance that is controllable between at least two states. A first electrode is electrically coupled to a first side of the solid electrolyte layer and is electrically coupled to a voltage source. A second electrode is electrically coupled to a second side of the solid electrolyte layer and is electrically coupled to the voltage source. Multi-bit memory units are also disclosed.