The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2011

Filed:

Aug. 22, 2006
Applicants:

Bing Ji, Pleasanton, CA (US);

Erik A. Edelberg, Castro Valley, CA (US);

Takumi Yanagawa, Fremont, CA (US);

Zhisong Huang, Fremont, CA (US);

Lumin LI, Santa Clara, CA (US);

Inventors:

Bing Ji, Pleasanton, CA (US);

Erik A. Edelberg, Castro Valley, CA (US);

Takumi Yanagawa, Fremont, CA (US);

Zhisong Huang, Fremont, CA (US);

Lumin Li, Santa Clara, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.


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