The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Apr. 28, 2009
Dong-jin Byun, Seoul, KR;
Bum-joon Kim, Seoul, KR;
Jung-geun Jhin, Gwangju, KR;
Jong-hyeob Baek, Daejeon, KR;
Dong-Jin Byun, Seoul, KR;
Bum-Joon Kim, Seoul, KR;
Jung-Geun Jhin, Gwangju, KR;
Jong-Hyeob Baek, Daejeon, KR;
Abstract
A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cmto 5E18 ions/cmor less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile