The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Apr. 13, 2007
Yaroslav Koshka, Starkville, MS (US);
Galyna Melnychuk, Starkville, MS (US);
Yaroslav Koshka, Starkville, MS (US);
Galyna Melnychuk, Starkville, MS (US);
Mississippi State University, Mississippi State, MI (US);
Abstract
Self-aligned fabrication of silicon carbide semiconductor devices is a desirable technique enabling reduction in the number of photolithographic steps, simplified alignment of different device regions, and reduced spacing between the device regions. This invention provides a method of fabricating silicon carbide (SiC) devices utilizing low temperature selective epitaxial growth which allows avoiding degradation of many masking materials attractive for selective epitaxial growth. Another aspect of this invention is a combination of the low temperature selective epitaxial growth of SiC and self-aligned processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile