The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jan. 04, 2008
Applicant:
Lianzhong Yu, Redmond, WA (US);
Inventor:
Lianzhong Yu, Redmond, WA (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for producing a MEMS device from a single silicon-on-insulator (SOI) wafer. An SOI wafer includes a silicon (Si) handle layer, a Si mechanism layer and an insulator layer located between the Si handle and Si mechanism layers. An example method includes etching active components from the Si mechanism layer. Then, the exposed surfaces of the Si mechanism layer is doped with boron. Next, portions of the insulator layer proximate to the etched active components of the Si mechanism layer are removed and the Si handle layer is etched proximate to the etched active components.