The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Dec. 14, 2010
Hai LI, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Harry Hongyue Liu, Maple Grove, MN (US);
Henry Huang, Apple Valley, MN (US);
Ran Wang, Irving, CA (US);
Hai Li, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Harry Hongyue Liu, Maple Grove, MN (US);
Henry Huang, Apple Valley, MN (US);
Ran Wang, Irving, CA (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.