The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2011

Filed:

Oct. 28, 2004
Applicants:

R. Daniel Mcgrath, Pittsford, NY (US);

Edward T. Nelson, Pittsford, NY (US);

Robert M. Guidash, Rochester, NY (US);

Charles V. Stancampiano, Rochester, NY (US);

James P. Lavine, Rochester, NY (US);

Inventors:

R. Daniel McGrath, Pittsford, NY (US);

Edward T. Nelson, Pittsford, NY (US);

Robert M. Guidash, Rochester, NY (US);

Charles V. Stancampiano, Rochester, NY (US);

James P. Lavine, Rochester, NY (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 9/64 (2006.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for lowering dark current in an image sensor pixel, the method includes the steps of providing a photosensitive area for receiving incident light which is converted into a charge; providing a gate for transferring charge from the photosensitive area; wherein the gate is held at a voltage which will accumulate majority carriers at a semiconductor-dielectric interface during integration for the photosensitive area. Alternatively, a potential profile can be provided under the gate to drain the dark current away from the photogeneration diffusion.


Find Patent Forward Citations

Loading…