The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2011

Filed:

Sep. 02, 2010
Applicants:

Ching-te Chuang, Taipei County, TW;

Chien-yu LU, Taichung, TW;

Inventors:

Ching-Te Chuang, Taipei County, TW;

Chien-Yu Lu, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/094 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high load driving device is disclosed. The driving device comprises an inverter receiving a digital voltage. The inverter reverses the digital voltage, and then sends out it. The output terminal of the inverter is coupled to a capacitor, a first P-type field-effect transistor (FET), a second P-type FET, a first N-type FET, and a third N-type FET. A push-up circuit is composed of these transistors and a second N-type FET and coupled to a P-type push-up FET. A load is coupled to a high voltage through the P-type push-up FET. When the digital voltage rises from a low level to a high level, the push-up circuit utilizes the original voltage drop of the capacitor to control the P-type push-up FET, whereby the gate voltage of the P-type push-up FET is at a low stabilization voltage that is lower than the ground potential. Then, the load is driven rapidly.


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