The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Feb. 13, 2006
Chia-hua Ho, Kaohsiung, TW;
Hang-ting Lue, Hsinchu, TW;
Yen-hao Shih, Changhua, TW;
Erh-kun Lai, Longjing Shiang, TW;
Kuang-yeu Hsieh, Jhubei, TW;
Chia-Hua Ho, Kaohsiung, TW;
Hang-Ting Lue, Hsinchu, TW;
Yen-Hao Shih, Changhua, TW;
Erh-Kun Lai, Longjing Shiang, TW;
Kuang-Yeu Hsieh, Jhubei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
Memory cells which include a semiconductor substrate having a source region and a drain region separated by a channel region; a charge-trapping structure disposed above the channel region of the semiconductor substrate; a first gate disposed above the charge-trapping structure and proximate to the source region; and a second gate disposed above the charge-trapping structure and proximate to the drain region; where the first gate and the second gate are separated by a first nanospace are provided, along with arrays including a plurality of such cells, methods of manufacturing such cells and methods of operating such cells.