The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Feb. 09, 2009
Chun-sung Huang, Changhua County, TW;
Ping-chia Shih, Hsin-Chu, TW;
Chiao-lin Yang, Taichung County, TW;
Chi-cheng Huang, Kaohsiung County, TW;
Chun-Sung Huang, Changhua County, TW;
Ping-Chia Shih, Hsin-Chu, TW;
Chiao-Lin Yang, Taichung County, TW;
Chi-Cheng Huang, Kaohsiung County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for manufacturing NAND memory cells includes providing a substrate having a first doped region formed therein; sequentially forming a first dielectric layer, a storage layer and a patterned hard mask on the substrate; forming a STI defining a plurality of recesses in the substrate through the patterned hard mask; sequentially forming a second dielectric layer and a first conductive layer filling the recesses on the substrate; and performing a planarization process to remove a portion of the first conductive layer and the second dielectric layer to form a plurality of self-aligned islanding gate structures.