The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Aug. 18, 2008
Young S. Lee, San Jose, CA (US);
Ying Rui, Sunnyvale, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Jang Gyoo Yang, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Young S. Lee, San Jose, CA (US);
Ying Rui, Sunnyvale, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Jang Gyoo Yang, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CF, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.