The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Feb. 27, 2006
Bang-chein Ho, Hsin-Chu, TW;
Jen-chieh Shih, Youngkang, TW;
Jian-hong Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of making a semiconductor device including forming a first sacrificial layer over a first layer to be etched, the first sacrificial layer having a plurality of openings formed therethrough exposing a portion of the first layer; forming a first photoresist layer over the first sacrificial layer and filling the plurality of openings formed through the first sacrificial layer; forming a plurality of openings in the first photoresist layer, each one of the plurality of openings in the first photoresist layer overlying one of the openings in the first sacrificial layer and wherein each opening in the first sacrificial layer has a smaller cross-sectional area then the cross-sectional area of the overlying opening in the first photoresist layer; and etching the first layer through the openings in the first photoresist layer and the first sacrificial layer, comprising exposing the first layer to an etching material.