The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Feb. 25, 2005
Masato Yamada, Annaka, JP;
Masanobu Takahashi, Annaka, JP;
Masato Yamada, Annaka, JP;
Masanobu Takahashi, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A composite growth-assisting substrateis formed by epitaxially growing a separation-assisting compound semiconductor layercomposed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substratecomposed of a GaAs single crystal in this order, on a first main surface of a substrate bulkcomposed of a GaAs single crystal. The sub-substrate portionis then separated from the composite growth-assisting substrate, so as to be left as a residual substrate portionon a second main surface of the main compound semiconductor layer, and a portion of the residual substrate portionis cut off to thereby form a cut-off portionhaving a bottom surface used as a light extraction surface. By this configuration, the light emitting device is provided as allowing effective use of the GaAs substrate, and increasing the light extraction efficiency.