The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2011

Filed:

Jul. 12, 2010
Applicants:

Won-bae Jang, Osan-si, KR;

Seung-chul Kim, Suwon-si, KR;

Chan-seung Choi, Suwon-si, KR;

Min-suk Kim, Suwon-si, KR;

Chee-wan Kim, Seoul, KR;

Sun-yong Lee, Seoul, KR;

Sang-rok Hah, Seoul, KR;

Inventors:

Won-bae Jang, Osan-si, KR;

Seung-chul Kim, Suwon-si, KR;

Chan-seung Choi, Suwon-si, KR;

Min-suk Kim, Suwon-si, KR;

Chee-wan Kim, Seoul, KR;

Sun-yong Lee, Seoul, KR;

Sang-rok Hah, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.


Find Patent Forward Citations

Jang, Won-bae. (2011). Semiconductor process evaluation methods including variable ion implanting conditions (U.S. Patent No. 7972874). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7972874

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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