The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jul. 31, 2007
Jun Kojima, Iwakura, JP;
Takeshi Endo, Obu, JP;
Eiichi Okuno, Mizuho, JP;
Yoshihito Mitsuoka, Toyota, JP;
Yoshiyuki Hisada, Okazaki, JP;
Hideo Matsuki, Obu, JP;
Jun Kojima, Iwakura, JP;
Takeshi Endo, Obu, JP;
Eiichi Okuno, Mizuho, JP;
Yoshihito Mitsuoka, Toyota, JP;
Yoshiyuki Hisada, Okazaki, JP;
Hideo Matsuki, Obu, JP;
Denso Corporation, Kariya, JP;
Abstract
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.