The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Aug. 04, 2008
Applicant:
Kyoung Bong Rouh, Icheon-si, KR;
Inventor:
Kyoung Bong Rouh, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
Abstract
A partial ion implantation apparatus and method are provided. The partial ion implantation apparatus includes an ion beam generator, a wafer chuck, and a plurality of atom-vibrating devices. The ion beam generator is configured to generate an ion beam. The wafer chuck is disposed to support a wafer into which the ion beam is implanted. The atom-vibrating devices are configured to vibrate silicon atoms in the wafer.
Rouh, Kyoung. (2011). Apparatus and method for partial ion implantation using atom vibration (U.S. Patent No. 7968857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7968857
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile