The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Aug. 28, 2009
Martin A. Hilkene, Gilroy, CA (US);
Kartik Santhanam, Fremont, CA (US);
Yen B. Ta, Cupertino, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Martin A. Hilkene, Gilroy, CA (US);
Kartik Santhanam, Fremont, CA (US);
Yen B. Ta, Cupertino, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Abstract
A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.