The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jun. 17, 2008
Atsushi Ogawa, Higashihiroshima, JP;
Satoshi Komada, Mihara, JP;
Hiroki Takaoka, Nara, JP;
Hiroshi Nakatsu, Mihara, JP;
Atsushi Ogawa, Higashihiroshima, JP;
Satoshi Komada, Mihara, JP;
Hiroki Takaoka, Nara, JP;
Hiroshi Nakatsu, Mihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer () held between an n-type nitride semiconductor layer () and a p-type nitride semiconductor layer (to) on a substrate (), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.