The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Apr. 13, 2009
Ming Fang, Plano, TX (US);
Fuchao Wang, Plano, TX (US);
Ming Fang, Plano, TX (US);
Fuchao Wang, Plano, TX (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile