The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
May. 15, 2009
Nicholas Doudoumopoulos, Garrett Park, MD (US);
Paul Christensen, Tracys Landing, MD (US);
Paul Wickboldt, Walnut Creek, CA (US);
Nicholas Doudoumopoulos, Garrett Park, MD (US);
Paul Christensen, Tracys Landing, MD (US);
Paul Wickboldt, Walnut Creek, CA (US);
Potomac Photonics, Inc., Lanham, MD (US);
Abstract
The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to laser radiation substantially exclusively at localized areas where TFTs are to be formed. The source of radiation is a copper vapor laser which produces a highly stable radiation in a visible spectrum with an energy sufficient to convert amorphous silicon into polysilicon in 1-3 shots. The optic system delivers the homogenized, conditioned and focused laser beam to the area of interest in a controlled manner. Single or multi-laser beam arrangements, as well as different shapes and sizes of laser beam spots are contemplated.