The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Oct. 26, 2007
Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, FR;
Thibault Kervyn DE Meerendre, Brussels, BE;
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, FR;
Thibault Kervyn De Meerendre, Brussels, BE;
Dow Corning Corporation, Midland, MI (US);
Ecole Polytechnique, Palaiseau, FR;
Abstract
A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.