The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2011

Filed:

Jan. 22, 2009
Applicants:

Manish Garg, Morrisville, NC (US);

Chiaming Chai, Chapel Hill, NC (US);

Michael Thaithanh Phan, Cary, NC (US);

Inventors:

Manish Garg, Morrisville, NC (US);

Chiaming Chai, Chapel Hill, NC (US);

Michael ThaiThanh Phan, Cary, NC (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell includes a storage element, a write circuit coupled to the storage element and a read circuit coupled to the storage element. At least a portion of the storage element and at least a portion of the write circuit are fabricated using a thicker functional gate oxide and at least a portion of the read circuit is fabricated using a thinner functional gate oxide.


Find Patent Forward Citations

Garg, Manish. (2011). Low leakage high performance static random access memory cell using dual-technology transistors (U.S. Patent No. 7961499). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7961499

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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