The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Sep. 23, 2008
Applicants:
Diaaeldin S. Khalil, Portland, OR (US);
Arijit Raychowdhury, Hillsboro, OR (US);
Muhammad M. Khellah, Tigard, OR (US);
Ali Keshavarzi, Portland, OR (US);
Inventors:
DiaaEldin S. Khalil, Portland, OR (US);
Arijit Raychowdhury, Hillsboro, OR (US);
Muhammad M. Khellah, Tigard, OR (US);
Ali Keshavarzi, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Dynamic Random Access Memory (DRAM) cell comprising a leakage compensation circuit. The leakage compensation circuit allows a compensation current from a source to flow to the memory cell storage node of the DRAM cell to compensate the leakage current from the memory cell storage node of the DRAM cell to improve retention time.