The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Mar. 31, 2008
Jean-pierre Nozieres, Le Sappey En Chartreuse, FR;
Ricardo Sousa, Grenoble, FR;
Bernard Dieny, Lans En Vercors, FR;
Olivier Redon, Seyssinet-Pariset, FR;
Ioan Lucian Prejbeanu, Sassenage, FR;
Jean-Pierre Nozieres, Le Sappey En Chartreuse, FR;
Ricardo Sousa, Grenoble, FR;
Bernard Dieny, Lans En Vercors, FR;
Olivier Redon, Seyssinet-Pariset, FR;
Ioan Lucian Prejbeanu, Sassenage, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called 'free' magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the 'polarizing layer'.