The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Apr. 08, 2008
Ming-cheng Chang, Taipei County, TW;
Wei-ming Liao, Taipei, TW;
Jer-chyi Wang, Taoyuan County, TW;
Yi-feng Chang, Taipei County, TW;
Ming-Cheng Chang, Taipei County, TW;
Wei-Ming Liao, Taipei, TW;
Jer-Chyi Wang, Taoyuan County, TW;
Yi-Feng Chang, Taipei County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A flash memory includes a substrate with a protrusion, a control gate, two floating gates, and a dielectric layer. The protrusion extends from a top face of the substrate. The control gate is formed on the protrusion of the substrate and extendedly covers opposite sidewalls of the protrusion. The floating gates are respectively formed on top of the protrusion and being on two opposite sides of the control gate. The dielectric layer is sandwiched the control gate and each of the two floating gates. Because of the arcuate control gate used in the flash memory, the controllability of the control gate is increased and the memory cell window is enhanced.