The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Sep. 08, 2006
Daniel M. Kinzer, El Segundo, CA (US);
Michael A. Briere, Manhattan Beach, CA (US);
Alexander Lidow, Hermosa Beach, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
Michael A. Briere, Manhattan Beach, CA (US);
Alexander Lidow, Hermosa Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
Processes are described for forming very thin semiconductor die (1 to 10 microns thick) in which a thin layer of the upper surface of the wafer is processed with junction patterns and contacts while the wafer bulk is intact. The top surface is then contacted by a rigid wafer carrier and the bulk wafer is then ground/etched to an etch stop layer at the bottom of the thin wafer. A thick bottom contact is then applied to the bottom surface and the top wafer carrier is removed. All three contacts of a MOSFET may be formed on the top surface in one embodiment or defined by the patterning of the bottom metal contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile