The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Jul. 24, 2009
Dixie Dunn, Salt Lake City, UT (US);
Paul Thorup, West Jordan, UT (US);
Dean E. Probst, West Jordan, UT (US);
Michael D. Gruenhagen, Salt Lake City, UT (US);
Dixie Dunn, Salt Lake City, UT (US);
Paul Thorup, West Jordan, UT (US);
Dean E. Probst, West Jordan, UT (US);
Michael D. Gruenhagen, Salt Lake City, UT (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor structure comprises an active region comprising trenches extending into a semiconductor region. Each trench includes a shield electrode and a gate electrode. The semiconductor structure also comprises a shield contact region adjacent to the active region. The shield contact region comprises at least one contact trench extending into the semiconductor region. The shield electrode from at least one of the trenches in the active region extends along a length of the contact trench. The semiconductor structure also comprises an interconnect layer extending over the active region and the shield contact region. In the active region the interconnect layer is isolated from the gate electrode in each trench by a dielectric layer and contacts mesa surfaces of the semiconductor region adjacent to the trenches. In the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench.