The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Feb. 04, 2009
Ritwik Bhatia, Albany, NY (US);
Li-qun Xia, Santa Clara, CA (US);
Chad Peterson, San Jose, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Ritwik Bhatia, Albany, NY (US);
Li-Qun Xia, Santa Clara, CA (US);
Chad Peterson, San Jose, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.