The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Jul. 25, 2005
Koji Yoshida, Kyoto, JP;
Keita Takahashi, Nara, JP;
Fumihiko Noro, Toyama, JP;
Masatoshi Arai, Nara, JP;
Nobuyoshi Takahashi, Nara, JP;
Koji Yoshida, Kyoto, JP;
Keita Takahashi, Nara, JP;
Fumihiko Noro, Toyama, JP;
Masatoshi Arai, Nara, JP;
Nobuyoshi Takahashi, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.