The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Dec. 17, 2007
Lei Xue, San Jose, CA (US);
Aimin Xing, Hopewell Junction, CA (US);
Chih-yuh Yang, San Jose, CA (US);
Angela Hui, Fremont, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Lei Xue, San Jose, CA (US);
Aimin Xing, Hopewell Junction, CA (US);
Chih-Yuh Yang, San Jose, CA (US);
Angela Hui, Fremont, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Memory devices having improved BVdss characteristics and methods of making the memory devices are provided. The memory devices contain bitline dielectrics on bitlines of a semiconductor substrate; first spacers adjacent the side surfaces of the bitline dielectrics and on the upper surface of the semiconductor substrate; a trench in the semiconductor substrate between the first spacers; and second spacers adjacent the side surfaces of the trench. By containing the trench and the first and second spacers between the bitlines, the memory device can improve the electrical isolation between the bitlines, thereby preventing and/or mitigating bitline-to-bitline current leakage and increasing BVdss.