The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Nov. 07, 2003
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Larry Alan Nesbit, Williston, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
Larry Alan Nesbit, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating a metal-oxide-semiconductor device structure. The method includes introducing a dopant species concurrently into a semiconductor active layer that overlies an insulating layer and a gate electrode overlying the semiconductor active layer by ion implantation. The thickness of the semiconductor active layer, the thickness of the gate electrode, and the kinetic energy of the dopant species are chosen such that the projected range of the dopant species in the semiconductor active layer and insulating layer lies within the insulating layer and a projected range of the dopant species in the gate electrode lies within the gate electrode. As a result, the semiconductor active layer and the gate electrode may be doped simultaneously during a single ion implantation and without the necessity of an additional implant mask.