The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Apr. 01, 2009
Andy Tsen, Chung-Ho, TW;
Jin-ning Sung, Pingjhen, TW;
Po-feng Tsai, Hsinpu Township, Hsinchu County, TW;
Jong-i Mou, Hsinpu Township, Hsinchu County, TW;
Andy Tsen, Chung-Ho, TW;
Jin-Ning Sung, Pingjhen, TW;
Po-Feng Tsai, Hsinpu Township, Hsinchu County, TW;
Jong-I Mou, Hsinpu Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
One embodiment is a method for fabricating ICs from a semiconductor wafer. The method includes performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further includes removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.