The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2011

Filed:

Oct. 11, 2010
Applicants:

Sam-kyu Won, Hwaseong-si, KR;

Jae-won Cha, Seoul, KR;

Kwang-ho Baek, Hwaseong-si, KR;

Inventors:

Sam-Kyu Won, Hwaseong-si, KR;

Jae-Won Cha, Seoul, KR;

Kwang-Ho Baek, Hwaseong-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of programming a multi level cell in a non-volatile memory device includes: performing a program operation on main cells and indicator cells; performing a first verifying operation on the main cells and the indicator cells based on a first verifying voltage; performing repeatedly the program operation and the first verifying operation until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage; and performing a second verifying operation on the main cells and the indicator cells based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.


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Won, Sam-Kyu. (2011). Method of programming a multi level cell (U.S. Patent No. 7948805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7948805

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