The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Feb. 21, 2007
Applicants:
Yukimune Watanabe, Tsukuba, JP;
Nobuyuki Mise, Tsukuba, JP;
Shinji Migita, Tsubuka, JP;
Inventors:
Assignees:
Seiko Epson Corporation, Tokyo, JP;
Renesas Technology Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/44 (2006.01); H01L 21/3205 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.