The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Dec. 28, 2007
Applicants:
Kyoung Bong Rouh, Goyang-si, KR;
Dong Seok Kim, Seoul, KR;
Inventors:
Kyoung Bong Rouh, Goyang-si, KR;
Dong Seok Kim, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of fabricating a semiconductor device having an impurity region with an impurity concentration of a first dose in a substrate. In the method, first impurity ions of a first conductivity type are implanted into the substrate, and a rapid thermal processing (RTP) is performed on the substrate to activate the first impurity ions. Second impurity ions of the first conductivity type are implanted into the substrate having the activated first impurity ions.