The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Sep. 27, 2010
James Pan, West Jordan, UT (US);
Qi Wang, Sandy, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A trench-gate field effect transistor includes trenches extending into a silicon region of a first conductivity type, and a gate electrodes in each trench. Body regions of second conductivity type extend over the silicon region between adjacent trenches. Each body region forms a PN junction with the silicon region. A gate dielectric layer lines at least upper sidewalls of each trench, and insulates the gate electrode from the body region. Source regions of the first conductivity flank the trenches. A silicon-germanium region vertically extends through each source region and through a corresponding body region, and terminates within the corresponding body region before reaching the PN junction.